POx/Al2O3 stacks for surface passivation of Si and InP
نویسندگان
چکیده
Passivation of semiconductor surfaces is crucial to reduce carrier recombination losses and thereby enhance the device performance solar cells other devices. Thin-film stacks phosphorus oxide (POx) aluminum (Al2O3) have recently been shown provide excellent passivation surfaces, including crystalline silicon indium phosphide, can also be highly interesting for materials such as Ge III-V semiconductors. On silicon, attributed combination a high positive fixed charge very low interface defect density. InP nanowires, application POx/Al2O3 improves lifetime threefold compared unpassivated nanowires. In this work, we review summarize recent results obtained on surface passivation. Several topics are discussed, various processing POx Al2O3 layers, role capping layer, aspects related integration. The feature some unique properties, an unusually density, prepared over wide deposition temperature range. These properties arise in part from mixing process that occurs between which upon post-deposition annealing leads formation AlPO4. provided by stable stack used conformally coat high-aspect-ratio structures showing their promise use
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ژورنال
عنوان ژورنال: Solar Energy Materials and Solar Cells
سال: 2022
ISSN: ['0927-0248', '1879-3398']
DOI: https://doi.org/10.1016/j.solmat.2022.111911